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ALD110908SAL
MOSFETs Dual EPAD(R) N-Ch
Part No:
ALD110908SAL
Mfr:
Advanced Linear Devices
Description:
MOSFETs Dual EPAD(R) N-Ch
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Advanced Linear Devices | |
| Product Category | MOSFETs | |
| RoHS | Details | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOIC-8 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 2 Channel | |
| Vds - Drain-Source Breakdown Voltage | 10 V | |
| Id - Continuous Drain Current | 12 mA | |
| Rds On - Drain-Source Resistance | 500 Ohms | |
| Vgs - Gate-Source Voltage | - 12 V, + 12 V | |
| Minimum Operating Temperature | 0 C | |
| Maximum Operating Temperature | + 70 C | |
| Pd - Power Dissipation | 500 mW | |
| Channel Mode | Depletion | |
| Packaging | Tube | |
| Brand | Advanced Linear Devices | |
| Configuration | Dual | |
| Forward Transconductance - Min | 0.0014 S | |
| Product | MOSFET Small Signals | |
| Product Type | MOSFETs | |
| Series | ALD110908S | |
| Factory Pack Quantity: Factory Pack Quantity | 50 | |
| Subcategory | Transistors | |
| Transistor Type | 2 N-Channel | |
| Type | MOSFET | |
| Typical Turn-Off Delay Time | 10 ns | |
| Typical Turn-On Delay Time | 10 ns | |
| Unit Weight | 0.002610 oz |
| USHTS | 8541210095 |
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| JPHTS | 8541210101 |
| TARIC | 8541290000 |
| MXHTS | 8542330299 |
| ECCN | EAR99 |
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