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RQ3E120BNTB
MOSFETs 4.5V Drive Nch MOSFET
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | MOSFETs | |
| RoHS | Details | |
| REACH - SVHC | Details | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | HSMT-8 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Id - Continuous Drain Current | 12 A | |
| Rds On - Drain-Source Resistance | 9.3 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Qg - Gate Charge | 29 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 2 W | |
| Channel Mode | Enhancement | |
| Packaging | Reel | |
| Packaging | Cut Tape | |
| Brand | ROHM Semiconductor | |
| Configuration | Single | |
| Fall Time | 12 ns | |
| Forward Transconductance - Min | 13 S | |
| Product Type | MOSFETs | |
| Rise Time | 30 ns | |
| Factory Pack Quantity: Factory Pack Quantity | 3000 | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-channel | |
| Typical Turn-Off Delay Time | 46 ns | |
| Typical Turn-On Delay Time | 9 ns | |
| Part # Aliases | RQ3E120BN | |
| Unit Weight | 0.196723 oz |
| USHTS | 8541290095 |
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.
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