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SI4425BDY-T1-GE3
MOSFETs 30V 11.4A 2.5W 12mohm @ 10V
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | MOSFETs | |
| RoHS | Details | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOIC-8 | |
| Transistor Polarity | P-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Id - Continuous Drain Current | 11.4 A | |
| Rds On - Drain-Source Resistance | 12 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V | |
| Qg - Gate Charge | 100 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 2.5 W | |
| Channel Mode | Enhancement | |
| Tradename | TrenchFET | |
| Packaging | Reel | |
| Packaging | Cut Tape | |
| Packaging | MouseReel | |
| Brand | Vishay / Siliconix | |
| Configuration | Single | |
| Height | 1.75 mm | |
| Length | 4.9 mm | |
| Product Type | MOSFETs | |
| Series | SI4 | |
| Factory Pack Quantity: Factory Pack Quantity | 2500 | |
| Subcategory | Transistors | |
| Width | 3.9 mm | |
| Part # Aliases | SI4425BDY-GE3 | |
| Unit Weight | 0.006596 oz |
| USHTS | 8541290095 |
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Si4 TrenchFET® Power MOSFETs
Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
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