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IPD650P06NMATMA1
MOSFETs TRENCH >=100V
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Infineon | |
| Product Category | MOSFETs | |
| RoHS | Details | |
| REACH - SVHC | Details | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | DPAK-3 (TO-252-3) | |
| Transistor Polarity | P-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 60 V | |
| Id - Continuous Drain Current | 22 A | |
| Rds On - Drain-Source Resistance | 65 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V | |
| Qg - Gate Charge | 39 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 83 W | |
| Channel Mode | Enhancement | |
| Packaging | Reel | |
| Packaging | Cut Tape | |
| Brand | Infineon Technologies | |
| Configuration | Single | |
| Fall Time | 12 ns | |
| Forward Transconductance - Min | 21 S | |
| Product Type | MOSFETs | |
| Rise Time | 14 ns | |
| Series | IPD06P003 | |
| Factory Pack Quantity: Factory Pack Quantity | 2500 | |
| Subcategory | Transistors | |
| Transistor Type | 1 P-Channel | |
| Typical Turn-Off Delay Time | 33 ns | |
| Typical Turn-On Delay Time | 12 ns | |
| Part # Aliases | IPD650P06NM SP004987256 | |
| Unit Weight | 0.011640 oz |
| USHTS | 8541290095 |
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
P-Channel Power MOSFETs
Infineon P-Channel Power MOSFETs offer an option to simplify circuitry while optimizing performance. The large portfolio of P-Channel power MOSFETs is designed for a wide range of industrial and automotive applications. The main advantage of a P-Channel device is the reduction of design complexity in high- and low-power applications. P-Channel Power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters, and low-voltage drive applications.
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