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AS4C2M32SA-7TCN

DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tray

Part No:
AS4C2M32SA-7TCN
Mfr:
Alliance Memory
Description:
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tray
Product AttributeAttribute ValueSelect
Manufacturer
Alliance Memory
Product Category
DRAM
RoHS
 Details
Type
SDRAM
Memory Size
64 Mbit
Data Bus Width
32 bit
Maximum Clock Frequency
143 MHz
Package / Case
TSOP-II-86
Organization
2 M x 32
Access Time
5.4 ns
Supply Voltage - Min
3 V
Supply Voltage - Max
3.6 V
Minimum Operating Temperature
0 C
Maximum Operating Temperature
+ 70 C
Series
AS4C2M32SA
Packaging
Tray
Brand
Alliance Memory
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Product Type
DRAM
Factory Pack Quantity: Factory Pack Quantity
108
Subcategory
Memory & Data Storage
Supply Current - Max
75 mA
Unit Weight
0.237739 oz
USHTS
8542320002
CNHTS
8542319090
JPHTS
854232021
MXHTS
8542320201
ECCN
EAR99
AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

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