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AS6C8008-55BIN
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
| Product Attribute | Attribute Value | Select |
|---|---|---|
| Manufacturer | Alliance Memory | |
| Product Category | SRAM | |
| RoHS | Details | |
| Memory Size | 8 Mbit | |
| Organization | 1 M x 8 | |
| Access Time | 55 ns | |
| Interface Type | Parallel | |
| Supply Voltage - Max | 5.5 V | |
| Supply Voltage - Min | 2.7 V | |
| Supply Current - Max | 60 mA | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 85 C | |
| Mounting Style | SMD/SMT | |
| Package / Case | TFBGA-44 | |
| Packaging | Tray | |
| Brand | Alliance Memory | |
| Memory Type | SDR | |
| Moisture Sensitive | Yes | |
| Product Type | SRAM | |
| Series | AS6C8008 | |
| Factory Pack Quantity: Factory Pack Quantity | 480 | |
| Subcategory | Memory & Data Storage | |
| Type | Asynchronous | |
| Unit Weight | 0.087849 oz |
| USHTS | 8542320041 |
| CNHTS | 8542319090 |
| CAHTS | 8542320041 |
| JPHTS | 854232019 |
| KRHTS | 8542321020 |
| TARIC | 8542324500 |
| MXHTS | 8542320201 |
| ECCN | 3A991.b.2.a |
Low Power CMOS SRAM
Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.
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