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AS4C512M16D3LA-10BIN

DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT

Part No:

AS4C512M16D3LA-10BIN

Mfr:

Alliance Memory

Description:

DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT

Product Attribute	Attribute Value	Select
Manufacturer	Alliance Memory
Product Category	DRAM
RoHS	Details
Type	SDRAM - DDR3L
Memory Size	8 Gbit
Data Bus Width	16 bit
Maximum Clock Frequency	933 MHz
Package / Case	FBGA-96
Organization	512 M x 16
Access Time	20 ns
Supply Voltage - Min	1.283 V
Supply Voltage - Max	1.45 V
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 95 C
Series	AS4C512M16D3LA
Packaging	Tray
Brand	Alliance Memory
Moisture Sensitive	Yes
Mounting Style	SMD/SMT
Product Type	DRAM
Factory Pack Quantity: Factory Pack Quantity	180
Subcategory	Memory & Data Storage
Supply Current - Max	62 mA

USHTS	8542320036
CNHTS	8542329010
ECCN	EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

DDR3L SDRAM

Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.

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